2000-05-03 page 1 SPD30N03S2L-08 preliminary data optimos ? ? ? ? = == = power-transistor features ? n-channel ? enhancement mode ? avalanche rated ? logic level ? d v /d t rated ? = 175c operating temperature product summary drain source voltage v ds 30 v drain-source on-state resistance r ds ( on ) 7.5 m ? continuous drain current i d 30 a pin 1 pin 2 pin 3 g d s type package ordering code SPD30N03S2L-08 p-to252 q67042-s4031 marking n03l08 maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t c = 25c , 1) t c = 100 c i d 30 30 a pulsed drain current t c = 25 c i d puls 120 avalanche energy, single pulse i d = 30 a , v dd = 25 v, r gs = 25 ? e as 250 mj reverse diode d v /d t i s = 30 a, v ds = 24 v, d i /d t = 200 a/s, t jmax = 175 c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c = 25 c p tot 125 w operating and storage temperature t j , t st g -55...+175 c iec climatic category; din iec 68-1 55/175/56 1 current limited by bondwire; with an r thjc = 1.2 k/w the chip is able to carry i d = 91 a
2000-05-03 page 2 SPD30N03S2L-08 preliminary data thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 1.2 k/w thermal resistance, junction - ambient, leaded r thj a - - 100 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 75 50 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs = 0 v, i d = 1 ma v (br)dss 30 - - v gate threshold voltage, v gs = v ds i d = 80 a v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds = 30 v, v gs = 0 v, t j = 25 c v ds = 30 v, v gs = 0 v, t j = 125 c i dss - - 0.01 10 1 100 a gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 1 100 na drain-source on-state resistance v gs = 4.5 v, i d = 30 a r ds(on) - 7.7 10 m ? drain-source on-state resistance v gs = 10 v, i d = 30 a r ds(on) - 5.6 7.5 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2000-05-03 page 3 SPD30N03S2L-08 preliminary data electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =30a 29 58 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 1900 2370 pf output capacitance c oss - 750 940 reverse transfer capacitance c rss - 170 230 turn-on delay time t d ( on ) v dd =15v, v gs =4.5v, i d =30a, r g =3.6 ? - 12 18 ns rise time t r - 90 140 turn-off delay time t d ( off ) - 25 38 fall time t f - 25 38 gate charge characteristics gate to source charge q g s v dd =24v, i d =30a - 6 8 nc gate to drain charge q g d - 14 18 gate charge total q g v dd =24v, i d =30a, v gs =0 to 10v - 47 59 gate plateau voltage v (p lateau ) v dd =24v, i d =30a - 3.1 - v reverse diode inverse diode continuous forward current i s t c =25c - - 30 a inverse diode direct current, pulsed i sm - - 120 inverse diode forward voltage v sd v gs =0v, i f =30a - 0.9 1.3 v reverse recovery time t rr v r =15v, i f = l s , d i f /d t =100a/s - 33 40 ns reverse recovery charge q rr - 32 40 nc
2000-05-03 page 4 SPD30N03S2L-08 preliminary data power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 160 c 190 t c 0 10 20 30 40 50 60 70 80 90 100 110 120 w 140 SPD30N03S2L-08 p tot drain current i d = f ( t c ) parameter: v gs 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 4 8 12 16 20 24 a 32 SPD30N03S2L-08 i d safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c 10 -1 10 0 10 1 10 2 v v ds 0 10 1 10 2 10 3 10 a SPD30N03S2L-08 i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s t p = 13.0 s transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w SPD30N03S2L-08 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2000-05-03 page 5 SPD30N03S2L-08 preliminary data typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v ds 0 5 10 15 20 25 30 35 40 45 50 55 60 a 75 SPD30N03S2L-08 i d v gs [v] a a 2.6 b b 2.8 c c 3.0 d d 3.2 e e 3.4 f f 3.6 g g 3.8 h h 4.5 i p tot = 125 w i 10.0 typ. drain-source-on-resistance r ds(on) = f ( i d ) parameter: v gs 0 10 20 30 40 50 a 65 i d 0 2 4 6 8 10 12 14 16 18 20 22 ? 26 SPD30N03S2L-08 r ds(on) v gs [v] = d d 3.2 e e 3.4 f f 3.6 g g 3.8 h h 4.5 i i 10.0 typ. transfer characteristics i d = f ( v gs ) v ds 2 x i d x r ds(on)max parameter: t p = 80 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v 4.0 v gs 0 5 10 15 20 25 30 35 40 45 50 a 60 i d typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 20 40 60 80 100 a 130 i d 0 10 20 30 40 50 60 70 s 90 g fs
2000-05-03 page 6 SPD30N03S2L-08 preliminary data drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 30 a, v gs = 10 v -60 -20 20 60 100 140 c 200 t j 0 2 4 6 8 10 12 14 ? 17 SPD30N03S2L-08 r ds(on) typ 98% gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = 80 a -60 -20 20 60 100 c 180 t j 0.0 0.5 1.0 1.5 2.0 v 3.0 v gs(th) 98 % typ. 2 % typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 v 30 v ds 2 10 3 10 4 10 pf c c i ss c oss c rss forward characteristics of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd 0 10 1 10 2 10 3 10 a SPD30N03S2L-08 i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%)
2000-05-03 page 7 SPD30N03S2L-08 preliminary data avalanche energy e as = f ( t j ) par.: i d = 30 a , v dd = 25 v, r gs = 25 ? 25 45 65 85 105 125 145 c 185 t j 0 20 40 60 80 100 120 140 160 180 200 220 mj 260 e as typ. gate charge v gs = f ( q gate ) parameter: i d = 30 a pulsed 0 10 20 30 40 50 60 nc 75 q gate 0 2 4 6 8 10 12 v 16 SPD30N03S2L-08 v gs 0,8 v ds max ds max v 0,2 drain-source breakdown voltage v (br)dss = f ( t j ) parameter: i d =10 ma -60 -20 20 60 100 140 c 200 t j 27 28 29 30 31 32 33 34 35 v 37 SPD30N03S2L-08 v (br)dss
2000-05-03 page 8 SPD30N03S2L-08 preliminary data published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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